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Proceedings Paper

Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software tools
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Paper Abstract

Because of the complexity of physical mechanisms and chemical reactions involved in e-beam patterning, there is no single software tool that is capable of modeling all processes. A comprehensive simulation approach for the entire e-beam lithography process is presented. This is possible by combining the simulation strengths of the TEMPTATION (Temperature Simulation) and PROLITH/3D software tools. Compatibility of the two software tools was developed by matching internal formats of intermediate simulation data. Monte Carlo simulation of a single point energy distribution, proximity effects, local temperature rise and corresponding change of resist sensitivity, absorbed energy in exposure of a pattern at given condition, post-exposure bake, acid diffusion in the resist, and resist development were simulated. The simulation was followed by analysis of resulting resist profile, including critical dimensions, wall slope, and residual resist thickness. Examples of simulations demonstrated use of this comprehensive simulation approach.

Paper Details

Date Published: 22 January 2001
PDF: 5 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410729
Show Author Affiliations
Igor Yu. Kuzmin, Soft Services (Russia)
Chris A. Mack, FINLE Division of KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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