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Proceedings Paper

Localized resist heating due to electron-beam patterning during photomask fabrication
Author(s): Alexander C. Wei; William A. Beckman; Roxann L. Engelstad; John W. Mitchell; Thanh N. Phung; Jun-Fei Zheng
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Paper Abstract

Localized resist heating effects that occur during electron beam (e-beam) patterning of optical masks can lead to critical dimension (CD) errors. These errors are due to unexpected resist development or underdevelopment, which is related to the temperature history of the resist. Eliminating this source of error requires a knowledge of the localized temperature history and how resist properties are impacted by elevated temperatures. Computer simulations of electron beam patterning of an optical mask can address the temperature history of the localized heating not possible through experimentation. Presented are the results of a study to determine the feasibility of using finite element (FE) analysis to predict these thermal effects. Two models were created to demonstrate its capabilities. The first shows that FE modeling is capable of high spatial resolution temperature profiles. The second demonstrates that FE models can be programmed to run complete patterning simulations.

Paper Details

Date Published: 22 January 2001
PDF: 12 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410727
Show Author Affiliations
Alexander C. Wei, Univ. of Wisconsin/Madison (United States)
William A. Beckman, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
John W. Mitchell, Univ. of Wisconsin/Madison (United States)
Thanh N. Phung, Intel Corp. (United States)
Jun-Fei Zheng, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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