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Proceedings Paper

Effect of beam blur in mask fabrication
Author(s): Seung-Hune Yang; Won-Tai Ki; Seong-Yong Moon; Tae Moon Jeong; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

Proposed high throughput electron beam systems require a large current, which intrinsically degrades the image quality due to Coulomb interaction effect. For that reason, the maximum achievable beam current is determined by the resolution required. Considerable efforts have been devoted to determine the beam blurs in electron beam systems. However, since measurement of the beam blur is highly difficult, we suggest three beam blur measurement methods in this paper: using process latitude, SEM resist figures and dot mark scan data. Although the results from these three methods do not agree exactly, it is possible to estimate beam blur, 90 nm 120 ran in mask writing system, EBM-3000 (Toshiba).

Paper Details

Date Published: 22 January 2001
PDF: 6 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410725
Show Author Affiliations
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Won-Tai Ki, Samsung Electronics Co., Ltd. (South Korea)
Seong-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Tae Moon Jeong, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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