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Proceedings Paper

Technological challenges in implementation of alternating phase-shift mask
Author(s): Wilman Tsai; Qi-De Qian; Ken Mr. Buckmann; Wen-Hao Cheng; Long He; Brian Irvine; Marilyn Kamna; Yulia O. Korobko; Michael Kovalchick; Steven M. Labovitz; R. Talevi; Jeff N. Farnsworth
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Paper Abstract

Alternating Phase Shift Mask (APSM) reticles is critical to achieve sub 0.1 um poly gate lithography. Intrinsic APSM image inbalance can be resolved with various methods such as isotropic etch and aperture sizing, where positional line-shift can be reduced to within 5nm of final CD target. Defect reduction of APSM fabrication is addressed with multiple-option strategy to achieve high manufacturing yield. After Develop Inspection (ADI) capability was demonstrated with partial and complete missing 180 deg apertures, detected at post-develop with correlation to Qz defect after dry etch. Feasibility of APSM inspection and repair was demonstrated with existing toolsets and critical gap versus APSM defect specification remained to be bridged.

Paper Details

Date Published: 22 January 2001
PDF: 11 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410720
Show Author Affiliations
Wilman Tsai, Intel Corp. (United States)
Qi-De Qian, Intel Corp. (United States)
Ken Mr. Buckmann, Intel Corp. (United States)
Wen-Hao Cheng, Intel Corp. (United States)
Long He, Intel Corp. (United States)
Brian Irvine, Intel Corp. (United States)
Marilyn Kamna, Intel Corp. (United States)
Yulia O. Korobko, Intel Corp. (United States)
Michael Kovalchick, Intel Corp. (United States)
Steven M. Labovitz, Intel Corp. (United States)
R. Talevi, Intel Corp. (United States)
Jeff N. Farnsworth, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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