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Proceedings Paper

Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography
Author(s): Sang-Sool Koo; Hee-Bom Kim; Hyoung-Soon Yune; Jee-Suk Hong; Seung-Weon Paek; Tae-Seung Eom; Chang-Nam Ahn; Young-Mog Ham; Ki-Ho Baik; Kyu-Yong Lee; Lee-Ju Kim; Hong-Seok Kim
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Paper Abstract

The patterning potentialities of sub-100nm pattern for ArF lithography was evaluated with conventional alternating PSM (alt-PSM) for dense lines and spaces (L/S) and phase edge PSM (PE-PSM) for isolated lines of memory device. In dense L/S pattern,110nm pattern was defined with relatively small depth of focus(DOF) window(~ 0.2 ?m) due to phase error of mask. As pattern sizes was changed from 130nm to 200nm, critical dimension (CD) difference between two neighboring spaces was varied and it was assumed that micro loading effect was occurred in Qz etching. The linearity was guaranteed to dense L/S of 110nm and isolated line of 90nm, and Iso-Dense bias was controlled within 15nm. The 60nm and 70nm isolated lines of PE-PSM ware defined with good process windows in the case of OA_X size(X-direction size of Cr open area) of 0.5 ?m. The 55nm isolated line was also defined. The pattern shift of isolated lines was occurred with 4~7nm as phase of mask was varies within 190 ~ 200 ° . Though the alt-PSM with high numerical aperture (NA) for ArF lithography was strong candidates for sub-1 OOnm lithography of memory device, the issues of mask fabrication such as tighter phase control and minimizing etch loading effect would be big obstacles. On the contrary, there were many possibilities of sub-100nm patterning in PE-PSM with good process windows, however tighter control of pattern shift due to phase error must be studied intensively.

Paper Details

Date Published: 22 January 2001
PDF: 13 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410711
Show Author Affiliations
Sang-Sool Koo, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee-Bom Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hyoung-Soon Yune, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jee-Suk Hong, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung-Weon Paek, Hyundai Electronics Industries Co., Ltd. (South Korea)
Tae-Seung Eom, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chang-Nam Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Young-Mog Ham, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)
Kyu-Yong Lee, DuPont Photomasks Korea Ltd. (South Korea)
Lee-Ju Kim, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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