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Proceedings Paper

KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process
Author(s): Juhwan Kim; Sang-Chul Kim; Hee-Chun Kim; Sang-Lee Lee; Yong-Kyoo Choi; Young-Mog Ham; Oscar Han
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Paper Abstract

We investigated KrF attenuated PSM defect printability for 120nm node actual DRAM lithography process. A programmed defect mask was fabricated for the experiment, which contains three different background pattern layers of isolation, bit lines, and bit line contact holes of the 120nm DRAM device. Various types and sizes of MoSi defects such as extensions, intrusions, dots, and holes were programmed on those background patterns. We used a high NA DUV scanner and high contrast resist for wafer printing test. Based on the experimental results, we defined the non-printable defect sizes of MoSi defects and evaluated the detection capabilities of i-line inspection tools for those printable defects. In addition, we tested repair performance of current tools by comparing the process windows of defect patterns between pre-repair and post-repair.

Paper Details

Date Published: 22 January 2001
PDF: 10 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410705
Show Author Affiliations
Juhwan Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Chul Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee-Chun Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Lee Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Yong-Kyoo Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)
Young-Mog Ham, Hyundai Electronics Industries Co., Ltd. (South Korea)
Oscar Han, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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