Share Email Print
cover

Proceedings Paper

Printing 0.13-um contact holes using 193-nm attenuated phase-shifting masks
Author(s): Chun-Ming Albert Wang; Shy-Jay Lin; Chia-Hui Lin; Yao Ching Ku; Anthony Yen
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We investigate the performance of nominally 6% attenuated phase shifting masks (AttPSM) for 193nm in printing 0. 13?m contact holes using a variety of shifter materials. Imaging performance of AttPSMs with various shifter materials, transmission, and side wall angles is presented and compared. Aerial images from binary and phase-shifting masks are analyzed by a 193nm aerial image acquisition tool to distinguish the contribution of the mask from that of the resist process. Compared to binary masks, AttPSMs are capable of printing 0.13?m contact holes with twice the DOR Our results indicate that 193nm AttPSM holds promise for patterning contact hole in the manufacturing of next generation logic devices.

Paper Details

Date Published: 22 January 2001
PDF: 12 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410704
Show Author Affiliations
Chun-Ming Albert Wang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shy-Jay Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chia-Hui Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yao Ching Ku, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

© SPIE. Terms of Use
Back to Top