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Paper Abstract

A UV inspection tool has been used to image and inspect Next Generation Lithography (NGL) reticles. Inspection images and simulations have been used to provide feedback to mask makers so that inspectability of NGL masks can be optimized. SCALPEL masks have high optical contrast and look much the same in reflection as conventional chrome on glass masks do in transmission. EPL stencil masks can be imaged well in reflection, but defects below the top surface, in the cutouts, may not be detectable optically. EUV masks that have been made to date tend to have relatively low contrast, with line edge profiles that are complex due to interference effects. Simulation results show that improved EUV inspection images can be obtained with a low reflectivity absorbing layer and proper choice of buffer layer thickness.

Paper Details

Date Published: 22 January 2001
PDF: 9 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410699
Show Author Affiliations
Donald W. Pettibone, KLA-Tencor Corp. (United States)
Noah Bareket, KLA-Tencor Corp. (United States)
Ted Liang, Intel Corp. (United States)
Alan R. Stivers, Intel Corp. (United States)
Scott Daniel Hector, Motorola (United States)
Pawitter J. S. Mangat, Motorola (United States)
Douglas J. Resnick, Motorola (United States)
Michael J. Lercel, Photronics, Inc. and IBM Corp. (United States)
Mark Lawliss, Photronics, Inc. and IBM Corp. (United States)
Christopher Magg, Photronics, Inc. and IBM Corp. (United States)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Reginald C. Farrow, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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