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Proceedings Paper

Analysis of photomask distortion caused by blank materials and open ratios
Author(s): Seong-Yong Moon; Won-Tai Ki; Seung-Hune Yang; Tae Moon Jeong; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

As optical lithography error budgets on pattern displacement become more and more stringent for features as small as <180 nm, overlay control will be one of the top challenges facing lithography in the future. However, mask induced error budgets are less considered than uniformity of a mask. In this paper, we demonstrate a pattern displacement caused by stress induced distortion, in-plane distortion(IPD) values of chrome-on-glass (COG) and phase-shift-mask (PSM) blanks, and overlay errors. The magnification after AR/Cr layer removal for a COG is 0.37 ppm, which corresponds to an IPD of 33 nm across 100 x 100 mm2 area. The IPD for PSM corresponds to 43 nm across 100 x 100 mm2 area with 0.48 ppm. The IPD for PSM increases dramatically with increasing open ratios, while that for COG only slightly increases. It is found that mix-match between steppers and scanners should be avoided as long as COG mask and PSM are mixed because errors such as skew and scan direction magnification are uncorrectable with steppers.

Paper Details

Date Published: 22 January 2001
PDF: 6 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410697
Show Author Affiliations
Seong-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Won-Tai Ki, Samsung Electronics Co., Ltd. (South Korea)
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Tae Moon Jeong, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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