Share Email Print
cover

Proceedings Paper

Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process
Author(s): Shane R. Palmer; Mark E. Mason; John N. Randall; Tom Aton; Keeho Kim; Alexander V. Tritchkov; James Burdorf; Michael L. Rieger; John P. Stirniman
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Selective strong phase shift mask techniques, whereby a phase-shift mask exposure is followed by a binary mask exposure to define a single pattern, present unique capabilities and problems. First, there is the proper exposure balance and alignment of the two masks. Second, there is the challenge of performing optical proximity correction that will account for two overlaying exposure models and masks. This is further complicated by the need to perform multiple biasing and adjustments that are often required for development processes. In this paper, we present results for applying a new OPC correction technique to a dual exposure binary and phase-shift mask that have been used for development of 100 nm CMOS processes. The correction recipe encompasses two models that were anchored to optimized processes (exposure, NA, and ?). The correction to the masks also utilized boolean techniques to perform selective biasing without destroying the original hierarchical structure. CMOS technology utilizes isolation with pitches of active device regions below 0.4 ?m. The effective gate length on silicon is in the range of 0.08 to 0.18 ?m. Patterning of trench openings and gate regions are accomplished using deep-UV lithography.

Paper Details

Date Published: 22 January 2001
PDF: 12 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410679
Show Author Affiliations
Shane R. Palmer, Texas Instruments Inc. (United States)
Mark E. Mason, Texas Instruments Inc. (United States)
John N. Randall, Texas Instruments Inc. (United States)
Tom Aton, Texas Instruments Inc. (United States)
Keeho Kim, Texas Instruments Inc. (United States)
Alexander V. Tritchkov, Avant! Corp. (United States)
James Burdorf, Avant! Corp. (United States)
Michael L. Rieger, Avant! Corp. (United States)
John P. Stirniman, Avant! Corp. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

© SPIE. Terms of Use
Back to Top