Share Email Print
cover

Proceedings Paper

Ultrastable and uniform EUV and UV detectors
Author(s): Shouleh Nikzad; Todd J. Jones; S. T. Elliott; Thomas J. Cunningham; Peter W. Deelman; Arthur B. C. Walker; Hakeem M. Oluseyi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The large imaging format, high sensitivity, compact size, and ease of operation of silicon-based sensors have led instrument designers to choose them for most visible-light imagers and spectrometers for space-based applications. This will probably remain the case in the near future. In fact, technologies presently under development will tend to strengthen the position of the silicon-based sensors. CCD-CMOS hybrids currently being developed may combine the advantages of both imagers and new high-gain amplifiers and could permit photon- counting sensitivity even in large-format imagers. Back- illumination potentially enables silicon detectors to be used for photometry and imaging applications for which front- illuminated devices are poorly suited. Successful detection by back illumination requires treatment of the back surface using techniques such as delta doping. Delta-doped CCDs were developed at the Microdevices Laboratory at the Jet Propulsion Laboratory in 1992. Using molecular beam epitaxy, fully- processed thinned CCDs are modified for UV enhancement by growing 2.5 nm of boron-doped silicon on the back surface. Named delta-doped CCDs because of the sharply-spiked dopant profile in the thin epitaxial layer, these devices exhibit stable and uniform 100% internal quantum efficiency without hysteresis in the visible and ultraviolet regions of the spectrum. In this paper we will discuss the performance of delta-doped CCDs in UV and EUV, applicability to electron- bombarded CCD (EBCCD), our in-house thinning capability, and bonding approaches for producing flat focal plane arrays. Recent activities on the extension of delta-doping to other imaging technologies will also be presented.

Paper Details

Date Published: 18 December 2000
PDF: 9 pages
Proc. SPIE 4139, Instrumentation for UV/EUV Astronomy and Solar Missions, (18 December 2000); doi: 10.1117/12.410541
Show Author Affiliations
Shouleh Nikzad, Jet Propulsion Lab. (United States)
Todd J. Jones, Jet Propulsion Lab. (United States)
S. T. Elliott, Jet Propulsion Lab. (United States)
Thomas J. Cunningham, Jet Propulsion Lab. (United States)
Peter W. Deelman, Jet Propulsion Lab. (United States)
Arthur B. C. Walker, Stanford Univ. (United States)
Hakeem M. Oluseyi, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 4139:
Instrumentation for UV/EUV Astronomy and Solar Missions
Silvano Fineschi; Clarence M. Korendyke; Oswald H. W. Siegmund; Bruce E. Woodgate, Editor(s)

© SPIE. Terms of Use
Back to Top