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Proceedings Paper

Structure and electronic properties of silicon oxynitride as gate dielectric
Author(s): Kazimierz Jerzy Plucinski; Ivan V. Kityk; Bouchta Sahraoui
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Paper Abstract

Despite considerable progress achieved over the past few years in understanding ultrathin oxynitrides, several fundamental questions, in particular the oxynitridation mechanism, and the mechanisms behind the beneficial role of nitrogen, are still not well understood. To better understand the explanations which have been proposed for the phenomena specific to silicon oxynitride and for the nature of the defects, a study of the electron structure of a MOS system using silicon oxynitrides as the gate oxide and based on a first-principle molecular dynamic method, was carried out.

Paper Details

Date Published: 23 August 2000
PDF: 7 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410100
Show Author Affiliations
Kazimierz Jerzy Plucinski, Military Univ. of Technology (Poland)
Ivan V. Kityk, Pedagogical School of Czestochowa (Poland)
Bouchta Sahraoui, Univ. d'Angers (France)


Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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