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Proceedings Paper

Photo-developing defect and developing-like defect on DUV process
Author(s): H. M. Sheng; Chen-Cheng Kuoe; L. G. Terng; Dong S. Cheng; Yung H. Liao
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Paper Abstract

Three types of photo developing and developing-like defect on DUV process were presented in this paper. Scumming of photoresist on nitride film during developing process which was resulted from interaction between by-product of nitride film deposition process and resists that could not be removed by developer and water rinse. Those scumming developing defect would lead to bamboo shoots-like residue after etching that could cause microscratch during STI CMP. Either film treatment with HF vapor clean before photoprocess or adding extra rinse after hard baking can effectively eliminate those scumming defect. Splash from developer cup during water rinse process which appearance on non- resist area were crown-like on hydrophobic film could be reduced by extra rinse process after hard baking. Also owing to high contact angle between surfactant type developer and resist, discolor appearance on resist are would be formed after developing. Method to solve this issue was to apply developer as pre-wet before developing process.

Paper Details

Date Published: 23 August 2000
PDF: 7 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410099
Show Author Affiliations
H. M. Sheng, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chen-Cheng Kuoe, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
L. G. Terng, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Dong S. Cheng, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yung H. Liao, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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