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Proceedings Paper

Subresolution process windows and yield estimation technique based on detailed full-chip CD simulation
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Paper Abstract

Conventional methods of CD-limited yield and process capability analysis either completely ignore the intra-die CD variability caused by the optical and process proximity effects or assume it is normally distributed. We show that these assumptions do not hold for the aggressive subresolution designs. The form and modality of intra-die poly-gate CD variability strongly depend on the defocus and exposure values. We study the influence of process parameters on strong phase shifted and binary mask designs. A definition of a CD-based process window is proposed to capture the 'proximity signature' of the design and its dependence on process parameters.

Paper Details

Date Published: 23 August 2000
PDF: 7 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410096
Show Author Affiliations
Yuri Granik, Mentor Graphics Corp. (United States)
Nicolas B. Cobb, Mentor Graphics Corp. (United States)
Emile Y. Sahouria, Mentor Graphics Corp. (United States)
Olivier Toublan, Mentor Graphics Corp. (France)
Luigi Capodieci, ASML MaskTools (United States)
Robert John Socha, ASML MaskTools (United States)


Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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