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Proceedings Paper

Real-time process control to prevent CD variation induced by postexposure delay
Author(s): Chin-Yu Ku; Tan Fu Lei; Jia-Min Shieh; Tsann-Bim Chiou; Yung-Cheng Chen
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Paper Abstract

One of the major problems for DUV resists is linewidth change owing to Post Exposure Delay (PED). Linewidth is mainly induced by acid diffusion during exposure and baking. Based on the mechanism of the neutralization of organic base and photo generated acid, a model had been generate din our previous study to describe the linewidth variation for different PED times. The derived equation can calculate the minimum elapse time, which will cause linewidth variation to exceed the specification of a specific CD. This work concludes that the smaller CD received a higher percentage of CD variation under PED for an isolated line pattern. Therefore, the minimum acceptable time for the smallest CD can be obtained based on +/- 10 percent of the nominal CD.

Paper Details

Date Published: 23 August 2000
PDF: 8 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410094
Show Author Affiliations
Chin-Yu Ku, National Chiao Tung Univ. (Taiwan)
Tan Fu Lei, National Chiao Tung Univ. (Taiwan)
Jia-Min Shieh, National Nano Device Labs./National Chiao Tung Univ. (Taiwan)
Tsann-Bim Chiou, National Nano Device Labs./National Chiao Tung Univ. (Taiwan)
Yung-Cheng Chen, Vanguard International Semiconductor Corp. (Taiwan)


Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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