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Proceedings Paper

Formation mechanism of submicrometer poly-Si surface defects
Author(s): Shani Keysar; Noah Shafry; Ilan Rabinovitch; Rafi Mor; Marcelo Wolovelsky; Denny Hannan; Zohar Neidik
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Paper Abstract

Sub-micron defects seen on Si wafers mainly in Electrically- Alterable-Read-Only-Memory products were investigated. These surface defects are detected by KLA2133 inspection tool only after Poly-Si decoration, and appear in a drying spot shape or scattered. These defects are seen in the CMOS parts of the device only. SEM and EDS analysis showed these defects are Poly-Si residues. The drying spot shape appearance of the defects seen in KLS2133 and optical microscope show these defects initiated form wet operations followed by drying. An experimental simulation was carried out to locate the source and mechanisms of these defects, which repeatedly appear during the fall. A strong correlation of these defects formation to excess humidity is shown in this paper. The experimental results indicate these defects are related to CMOS operations, resulting from micro masking.

Paper Details

Date Published: 23 August 2000
PDF: 7 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410085
Show Author Affiliations
Shani Keysar, Tower Semiconductors Ltd. (Israel)
Noah Shafry, Tower Semiconductors Ltd. (Israel)
Ilan Rabinovitch, Tower Semiconductors Ltd. (Israel)
Rafi Mor, Tower Semiconductors Ltd. (Israel)
Marcelo Wolovelsky, Tower Semiconductors Ltd. (Israel)
Denny Hannan, Tower Semiconductors Ltd. (Israel)
Zohar Neidik, Tower Semiconductors Ltd. (Israel)


Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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