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Proceedings Paper

Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monolithic integration with Si-based readout-integrated circuitry for low cost and high performance
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Paper Abstract

Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at (lambda) equals 9 micrometers which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 micrometers out to 20 micrometers while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 micrometers and 8.5 micrometers . Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based readout integrated circuitry.

Paper Details

Date Published: 15 December 2000
PDF: 13 pages
Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409875
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Matthew Erdtmann, Northwestern Univ. (United States)
Christopher Louis Jelen, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)
F. Guastavinos, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
Yoon-Soo Park, Office of Naval Research (United States)


Published in SPIE Proceedings Vol. 4130:
Infrared Technology and Applications XXVI
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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