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Proceedings Paper

Compositional instability and elemental redistribution in Hg1-xCdxTe induced by low-energy ion bombardment
Author(s): Huadong Zhang; Yueyuan Xia; Jiaxiong Fang
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Paper Abstract

Monte Carlo simulations are used to study the compositional changes in the near surface layer of HG-xCdxTe crystal substrate induced by F+ and Ar+ ion bombardment in the energy range of 0.1 to 5keV. The effects of the crystal structure of the substrate and the total dose used in the bombardment are involved in the simulations. Due to the preferential sputtering for different elements in the substrate and the difference of the displacement energies for these elements, remarkable redistribution of the constituent elements in the material are observed. The possibility of forming p-n junction by using the Hg enrichment layer near the surface as a diffusion source is discussed.

Paper Details

Date Published: 15 December 2000
PDF: 4 pages
Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409830
Show Author Affiliations
Huadong Zhang, Shandong Univ. (China)
Yueyuan Xia, Shandong Univ. (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4130:
Infrared Technology and Applications XXVI
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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