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Proceedings Paper

Evaluation of irradiation-induced deep levels in Si
Author(s): Kenichiro Kono; Jessica G. Sandland; Kazumi Wada; Lionel C. Kimerling
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Paper Abstract

The front-illuminated CCD devices on board the Chandra X-ray observatory have been damaged by proton beam irradiation during radiation belt passage. The scattered ions such as protons created the traps in the buried n-channel of the CCD. The effect of proton radiation induced defects in Si is summarized. The generation and evolution of the irradiation defects is studied and its relationship with CCD performance is discussed. The methods for enhancement of dissociation of defects by biasing and/or light illumination are proposed to recover the performance of CCD.

Paper Details

Date Published: 13 December 2000
PDF: 7 pages
Proc. SPIE 4140, X-Ray and Gamma-Ray Instrumentation for Astronomy XI, (13 December 2000); doi: 10.1117/12.409120
Show Author Affiliations
Kenichiro Kono, Massachusetts Institute of Technology (United States)
Jessica G. Sandland, Massachusetts Institute of Technology (United States)
Kazumi Wada, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 4140:
X-Ray and Gamma-Ray Instrumentation for Astronomy XI
Kathryn A. Flanagan; Oswald H. W. Siegmund, Editor(s)

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