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Proceedings Paper

Annealing studies of solution-deposited ZrO2 thin films on self-assembled monolayers
Author(s): K. A. Ritley; F. Schreiber; K.-P. Just; Helmut Dosch; T. P. Niesen; F. Aldinger
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Paper Abstract

Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by alkyltrichlorosilane self-assembled monolayers. The interface structure, thermal stability and densification of these films in the temperature range from room temperature to 750 degree(s)C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution. Decreasing film thickness and increasing density is found upon annealing up to 750 degree(s)C. A 25 nm film revealed the appearance of a mixed-phase crystalline structure at 800 degree(s)C which disappeared upon cooling. There is no visible evidence of stress-induced microstructural changes, such as peeling or cracking.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408486
Show Author Affiliations
K. A. Ritley, Max-Planck-Institut fuer Metallforschung and Univ. Stuttgart (Germany)
F. Schreiber, Max-Planck-Institut fuer Metallforschung and Univ. Stuttgart (Germany)
K.-P. Just, Max-Planck-Institut fuer Metallforschung and Univ. Stuttgart (Germany)
Helmut Dosch, Max-Planck-Institut fuer Metallforschung and Univ. Stuttgart (Germany)
T. P. Niesen, Max-Planck-Institut fuer Metallforschung and Univ. Stuttgart (Germany)
F. Aldinger, Max-Planck-Institut fuer Metallforschung and Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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