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Proceedings Paper

Behavior of current under dc field and switching, and current-controlled negative resistance and oscillation on MOM device of Bi2O3 film
Author(s): Kazunori Komorita
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Paper Abstract

By using the MOM device of Bi2O3 films, some electrical properties on these films or the device are studied as follows: (1) The behavior of the electric current across the thick Bi2O3 films under DC field, is elucidated by the formula Ivaries direct asVn for the regions of low (n equals 1), ohmic (n equals 1), high (n > 2) conductivities and SCLC (n >= 1.5 approximately 2). A hysteresis of the I-V curve results from the residual space charge and polarization in the device. (2) The memory switching and oscillation (in CCNR) phenomena on the device of thin Bi2O3 films are observed under the AC applied voltage in the room temperature and 77 K. These rest upon a thermal effect due to the current injection to the device.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408467
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Kazunori Komorita


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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