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Proceedings Paper

Simulation of nucleation and initial growth of thin films on metal surface
Author(s): Fengmin Wu; Yuanchun Liu; Xiongwei Wang; Ziqin Wu
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Paper Abstract

The atomic processes of nucleation and initial growth of thin films on metal surfaces are simulated by Monte Carlo method, using realistic growth model and physical parameters. The effects of adatoms evaporation from the substrate and diffusion along the edge of the islands are included in the simulation model. It is shown that the compact structure of Fe island grows on Fe(001) surface over the wide range of temperatures from 250 to 2000 K, which is consistent with the nucleation theory. The simulation results not only nicely reproduce the experiments of thin film growth at intermediate temperature, but also predict the growth situations of thin films at high temperature.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408466
Show Author Affiliations
Fengmin Wu, Zhejiang Univ. of Technology (China)
Yuanchun Liu, College of Broadcast and Television/Zhejiang Province (China)
Xiongwei Wang, Zhejiang Univ. of Technology (China)
Ziqin Wu, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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