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Proceedings Paper

Room-temperature operation of Nb-based single-electron transistors
Author(s): Jun-ichi Shirakashi
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Paper Abstract

Room temperature operation of Nb/Nb oxide-based single- electron transistors (SETs) was successfully achieved and was reported in detail. First, the SETs were fabricated by a scanning probe microscope (SPM)-based anodic oxidation technique, and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two kinds of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.

Paper Details

Date Published: 29 November 2000
PDF: 6 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408463
Show Author Affiliations
Jun-ichi Shirakashi, Akita Prefectural Univ. (Japan)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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