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Proceedings Paper

MBE growth of HgCdTe and device applications
Author(s): Li He; Yanq Wu; Shanli Wang; Meifang Yu; Lu Chen; Yimin Qiao; Jianrong Yang; Weizheng Fang; Yanjin Li; Qingyao Zhang; Rijun Ding; Junhao Chu
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Paper Abstract

The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.

Paper Details

Date Published: 29 November 2000
PDF: 6 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408462
Show Author Affiliations
Li He, Shanghai Institute of Technical Physics (China)
Yanq Wu, Shanghai Institute of Technical Physics (China)
Shanli Wang, Shanghai Institute of Technical Physics (China)
Meifang Yu, Shanghai Institute of Technical Physics (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Yimin Qiao, Shanghai Institute of Technical Physics (China)
Jianrong Yang, Shanghai Institute of Technical Physics (China)
Weizheng Fang, Shanghai Institute of Technical Physics (China)
Yanjin Li, Shanghai Institute of Technical Physics (China)
Qingyao Zhang, Shanghai Institute of Technical Physics (China)
Rijun Ding, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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