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Proceedings Paper

Excitons in InSb quantum wells: a multiuse tool
Author(s): N. Dai; F. Brown; G. A. Khodaparast; Ryan E. Doezema; S. J. Chung; M. B. Santos
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Paper Abstract

We use exciton signatures in optical absorption spectra to probe material and structural properties of InSb/AlxIn1-xSb multiple quantum wells. Excitonic transition lines have been observed up to room temperature for the system in which exciton binding energy is only 1 meV largely due to very weak LO-phonon-electron coupling. Parabolically graded quantum wells were grown and used to study the band offset ratio at the InSb/AlxIn1-xSb heterointerface. A 0.62 +/- 0.04 offset ratio is extracted from the exciton transitions measured on samples with Al concentrations in the range 2% to 12%. Furthermore, deformation potentials in the system have been studied. The hydrostatic and the shear deformation potentials are determined simultaneously to be around -6.5 +/- 0.3 and -1.5 +/- 0.2, respectively.

Paper Details

Date Published: 29 November 2000
PDF: 6 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408459
Show Author Affiliations
N. Dai, Univ. of Oklahoma (United States)
F. Brown, Univ. of Oklahoma (United States)
G. A. Khodaparast, Univ. of Oklahoma (United States)
Ryan E. Doezema, Univ. of Oklahoma (United States)
S. J. Chung, Univ. of Oklahoma (United States)
M. B. Santos, Univ. of Oklahoma (United States)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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