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Proceedings Paper

Optical investigations on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells
Author(s): X. G. Wang; Yong Chang; Xin Cao; Yongsheng Gui; Junhao Chu
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Paper Abstract

In this paper, photoluminescence (PL) measurements were performed on several series of single-side Si doped MBE pseudomorphic high electron mobility transistors (p-HEMTs) quantum well samples, with different spacer layer widths, well widths and Si (delta) -doped concentrations, under different temperatures and excitation power densities. PL signals from the transitions of the second electron subband to the first heavy-hole subband (e2-hh1) and the first electron subband to the first heavy-hole subband (e1-hh1) have been observed with good symmetry and narrow full with at half maximum indicating high sample quality compared with previous reported results. The dynamic competitive luminescence mechanism between the radiations of e2-hh1 and e1-hh1 was discussed in detail. The confining potential, subband energies, corresponding envelope functions, subband occupations and transferring efficiency have been calculated by self-consistent definite differential method at different temperatures in comparison with our experiment results. The relative variation of the integrated luminescence intensity of the two transitions (e1-hh1 and e2-hh1) was found to be dependent on the temperature and the structure's properties, e.g. spacer layer width, dopant concentration and well width, which is an efficient characterization method before p-HEMTs device fabrication.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408458
Show Author Affiliations
X. G. Wang, Shanghai Institute of Technical Physics (China)
Yong Chang, Shanghai Institute of Technical Physics (United States)
Xin Cao, Institute of Semiconductors (China)
Yongsheng Gui, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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