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Proceedings Paper

Photothermal ionization spectroscopy of Be acceptor in GaAs
Author(s): Xianzhang Yuan; Wei Lu; Guo Liang Shi; Zhanghai Chen; Z.L. Miao; Shuechu Shen
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Paper Abstract

The photothermal ionization spectroscopy (PTIS) has been employed to study Be shallow acceptor states in GaAs grown by MBE. We have observed the G line, D line and C line transitions which are from the ground state 1s3/2((Gamma) 8+) of Be acceptor to the first three excited odd-parity states 2p3/2(Gamma) 8-), 2p5/2((Gamma) 8-) and 2p5/2((Gamma) 7-), respectively. The transition from the ground state 1s3/2((Gamma) 8-) to the excited state 2p1/2((Gamma) 6-) is identified as well. According to the PTIS, we deduce the binding energy of Be ground state in GaAs is 28.6 mev.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408455
Show Author Affiliations
Xianzhang Yuan, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Guo Liang Shi, Shanghai Institute of Technical Physics (China)
Zhanghai Chen, Shanghai Institute of Technical Physics (China)
Z.L. Miao, Shanghai Institute of Technical Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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