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Proceedings Paper

D-A emission in photoluminescence spectrum of GaN grown by rf plasma-assisted MBE
Author(s): Zhibiao Zhao; Wei Li; Ming Qi; Aizhen Li
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Paper Abstract

Donor-acceptor pair (DAP) in wurtzite GaN films grown by radio frequency plasma assisted molecule beam epitaxy on sapphire substrates using low temperature GaN buffer layers have been studied using photoluminescence. The energy levels of N vacancy, as donors, were calculated using an approximate formula, and good agreement with DA emission results. Native defects related to DAP and their formation energies were discussed.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408454
Show Author Affiliations
Zhibiao Zhao, Shanghai Institute of Metallurgy (China)
Wei Li, Shanghai Institute of Metallurgy (China)
Ming Qi, Shanghai Institute of Metallurgy (China)
Aizhen Li, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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