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Proceedings Paper

Photoluminescence properties of ultrathin CdSe layer depositions in ZnSe matrix
Author(s): Yu Yang; De Zen Shen; Jiying Zhang; Xiaowei Zhao; Yuxue Liu; D. X. Zhao; Xiwu Fan
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Paper Abstract

The photoluminescence properties of ultrathin CdSe layer were reported in this paper. Several monolayers of CdSe well layer were deposited in ZnSe matrix by lower-pressure metalorganic chemical vapor deposition. Two peaks were observed in the ultrathin structure. It was considered that the high-energy peak came from the exciton combination in the ultrathin CdSe well layer and the low-energy peak might come from the interface or impurity. The decrease of growth periods could lead the peak value of exciton peak red shift and the full-width at half-maximum become narrow. This was codetermined by the effect of interdiffusion and interface roughness or well width fluctuation.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408453
Show Author Affiliations
Yu Yang, Changchun Institute of Optics and Fine Mechanics (China)
De Zen Shen, Changchun Institute of Optics and Fine Mechanics (China)
Jiying Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Xiaowei Zhao, Changchun Institute of Optics and Fine Mechanics (China)
Yuxue Liu, Changchun Institute of Optics, Fine Mechanism and Phys (China)
D. X. Zhao, Changchun Institute of Optics and Fine Mechanics (China)
Xiwu Fan, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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