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Proceedings Paper

Capture barrier of Sn-related DX centers in AlGaAs epilayers
Author(s): Xifeng Xiao; Junyong Kang; Huahan Zhan; Qisheng Huang; Zhanguo Wang
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Paper Abstract

Thermal capture and emission processes of Sn-related DX centers in AlxGa1-xAs (x equals 0.26) were measured by a constant capacitance voltage transient in various temperatures. By employing a Laplace defect spectroscopic method, the non-exponential transients were decomposed into several discrete exponential components. The results shown that more exponential components appeared int he small emission rate region as capture period increased. This indicates that electrons preferentially fill shallow energy levels due to their lower capture barriers. Discrete exponential components of the capture process were identified and four of their barriers were preliminarily measured to be about 0.14, 0.15, 0.16, and 0.17 eV, respectively.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408452
Show Author Affiliations
Xifeng Xiao, Xiamen Univ. (China)
Junyong Kang, Xiamen Univ. (China)
Huahan Zhan, Xiamen Univ. (China)
Qisheng Huang, Xiamen Univ. (China)
Zhanguo Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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