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Proceedings Paper

Study of interdiffusion in HgCdTe/CdZnTe structures by infrared transmission spectroscopy
Author(s): Gensheng Huang; Jianrong Yang; Xinqiang Chen; Weizheng Fang; Zhiming Huang; Li He
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Paper Abstract

Based on empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a novel calculation method determining the composition profile of epitaxy layer from room- temperature infrared transmittance spectroscopy is presented. The composition depth profile of Hg1-xCdxTe film samples grown by liquid-phase epitaxy and after annealing is determined using this method. The expression of the composition interdiffusion coefficient for Hg1-xCdxTe was deduced.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408451
Show Author Affiliations
Gensheng Huang, Shanghai Institute of Technical Physics and Shandong Univ. (China)
Jianrong Yang, Shanghai Institute of Technical Physics (China)
Xinqiang Chen, Shanghai Institute of Technical Physics (China)
Weizheng Fang, Shanghai Institute of Technical Physics (China)
Zhiming Huang, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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