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Proceedings Paper

In-situ photomodulated reflectance study on GaAs/AlxGa1-xAs single surface quantum well
Author(s): Z.L. Miao; P. P. Chen; Wei Lu; W. L. Xu; Z.F. Li; W. Y. Cai; Xianzhang Yuan; Pulin Liu; Guo Liang Shi; Shuechu Shen
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Paper Abstract

We have studied the energy band transitions between confined sub-bands in 10 nm surface quantum well based on in-situ Photo-modulated Reflectance (PR) Spectrum in Molecular Beam Epitaxy system. The single surface quantum well (SQW) is confined by the vacuum on one side and by AlxGa1-xAs barrier on the other side. The structure parameters of the SQW are monitored by the Reflective High- Energy Electron Diffraction (RHEED) during growing procedure. In PR spectrum, we have observed clearly the transitions from the hole sub-bands to the electronic sub- bands. The transition of excitation states is first observed in single surface quantum well. The results are well explained by the effective mass approximation with parameters provided by RHEED.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408450
Show Author Affiliations
Z.L. Miao, Shanghai Institute of Technical Physics (China)
P. P. Chen, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
W. L. Xu, Shanghai Institute of Technical Physics (China)
Z.F. Li, Shanghai Institute of Technical Physics (China)
W. Y. Cai, Shanghai Institute of Technical Physics (China)
Xianzhang Yuan, Shanghai Institute of Technical Physics (China)
Pulin Liu, Shanghai Institute of Technical Physics (China)
Guo Liang Shi, Shanghai Institute of Technical Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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