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Proceedings Paper

Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
Author(s): Zhixun Ma; Xianbo Liao; Weimin Zheng; Jian Yu; Junhao Chu
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Paper Abstract

Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513 - 519 cm-1 after 1170 degree(s)C annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3 - 10 nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980 cm-1 of Si-O-Si stretching vibration at 1085 cm-1 in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degree(s)C. This sub-oxide phase is located at the interface between Si Crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408447
Show Author Affiliations
Zhixun Ma, Institute of Semiconductors and Shanghai Institute of Technical Physics (China)
Xianbo Liao, Institute of Semiconductors (China)
Weimin Zheng, Shanghai Institute of Technical Physics (China)
Jian Yu, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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