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Proceedings Paper

Degradation of Isc and the pattern of degradation of a-Si:H
Author(s): Yeshitila G. Michael; Ilia M. Kachirski
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Paper Abstract

The pattern of light induced degradation, i.e. the degree of degradation of a-Si:H pinpin solar cell parameters were studied on different i-layer thickness using high intensity (approximately 10 AM 1.5) illumination. It was found that stacked cells do not show a uniform degradation pattern as in the case of single junction solar cells. In particular, the degradation in short-circuit current Isc of stacked cells shows a big difference for thick (approximately 500 nm) and thin (approximately 400 nm) pinpin cells. It was found that degradation of the stacked cells with thick bottom layers exhibit a degradation pattern similar to that of single junction cells, i.e. the degradation in efficiency comes from the fill factor and the short circuit current, while open circuit voltage being degraded slightly. The degradation in short circuit current of cells with thin bottom layers is negligibly small.

Paper Details

Date Published: 29 November 2000
PDF: 3 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408445
Show Author Affiliations
Yeshitila G. Michael, Alemaya Univ. of Agriculture (Ethiopia)
Ilia M. Kachirski, Papua New Guinea Univ. of Technology (Papua New Guinea)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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