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Proceedings Paper

Growth of n-type ZnTe films and formation of ohmic contacts
Author(s): Kazuki Hayashida; Mitsuhiro Nishio; Yoshiaki Mitsuishi; Qixin Guo; Hiroshi Ogawa
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Paper Abstract

N-type ZnTe films with resistivities of 2 and 13 (Omega) cm have been grown by metalorganic vapor phase epitaxial technique using triethylaluminum. The photoluminescence spectra from these films exhibit strong excitonic emission and donor-acceptor-pair emission associated with Al donor and very weak deep emission band due to the Zn vacancy and Al donor complex. We have examined various metals (Al, Mg and W) and an alloy (In-Hg) for ohmic contacts to n-type ZnTe. From the current-voltage characteristics between two contacts at room temperature for above-mentioned metals and alloy, it has been found that acceptable contacts are formed using W and In-Hg alloy. The best contact among the investigated electrodes is achievable by using W electrode.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408444
Show Author Affiliations
Kazuki Hayashida, Saga Univ. (Japan)
Mitsuhiro Nishio, Saga Univ. (Japan)
Yoshiaki Mitsuishi, Saga Univ. (Japan)
Qixin Guo, Saga Univ. (Japan)
Hiroshi Ogawa, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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