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Proceedings Paper

Characteristics of CdSe thin film transistor
Author(s): Yumei Jing; Ruhua Ye; Zhiming Li; Jusheng Li
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Paper Abstract

Cadmium selenide thin film transistors were fabricated using normal evaporation and sputtering technique in multiple pumpdown of vacuum systems. The device structure, materials of each layer and deposition conditions are depicted. Characteristics of CdSe TFTs were studied. The results indicate that stable CdSe TFTs with good characteristics can be obtained by use of simple vacuum deposition processes and adding indium thin layer in the insulator/semiconductor interface.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408442
Show Author Affiliations
Yumei Jing, Changchun Institute of Optics and Fine Mechanics (China)
Ruhua Ye, Changchun Institute of Optics and Fine Mechanics (China)
Zhiming Li, Changchun Institute of Optics and Fine Mechanics (China)
Jusheng Li, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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