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Proceedings Paper

Development of SiGe/Si film heterojunction bipolar transistors
Author(s): Lin Guo; Kaicheng Li; Daoguang Liu; Jing Zhang; Qiang Yi; F. Arnaud d'Avitaya; Shiliu Xu
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Paper Abstract

In the paper, development on MBE-based SiGe/Si heterojunction bipolar transistors (HBT) is described. The SiGe/Si film used in the present work was grown by SIVA32 molecular beam epitaxy system made in Riber, France. 3 micrometers process technology with poly-silicon emitter was used to develop SiGe HBT devices. The experimental results indicated that both the direct current characteristics and the cutoff frequency of SiGe HBT are satisfactory. The current gain (beta) of HBT devices is 50, when the collector voltage Vc equals 2V and the collector current Ic equals 5 mA. The cutoff frequency fT equals 5.1 GHz. And the uniformity of the cutoff frequency of HBT is quite good.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408441
Show Author Affiliations
Lin Guo, Ministry of Information Industry (China)
Kaicheng Li, Ministry of Information Industry (China)
Daoguang Liu, Ministry of Information Industry (China)
Jing Zhang, Ministry of Information Industry (China)
Qiang Yi, Ministry of Information Industry (China)
F. Arnaud d'Avitaya, CRMC2-CNRS (France)
Shiliu Xu, Ministry of Information Industry (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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