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Proceedings Paper

High-power InGaAsP/GaAs SCH SQW lasers
Author(s): Zhonghui Li; Jinhua Yang; Genzhu Wu; Xingde Zhang
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Paper Abstract

InGaAsP/GaAs SCH SQW lasers have been prepared by LP-MOCVD. The dependence of threshold current density (Jth) on cavity length (L) was explained by threshold current condition and gain characteristics diodes samples with output power of 1 to 2 W, threshold current density (Jth) of 330 to 450 A/cm2 and external differential quantum efficiency ((eta) d) 35% to 75%, are in good agreement with the designed requirement.

Paper Details

Date Published: 29 November 2000
PDF: 3 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408440
Show Author Affiliations
Zhonghui Li, Changchun Institute of Optics and Fine Mechanics (China)
Jinhua Yang, Changchun Institute of Optics and Fine Mechanics (China)
Genzhu Wu, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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