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Proceedings Paper

Silicon solar cells with Shottky barrier based on metal films with different crystal state
Author(s): Sh. S. Aslanov; H. R. Nuriyev; F. B. Dadasheva
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Paper Abstract

By forming platinum siliside of on n-type silicon plates are created Solar Elements with a Shottky barrier. Siliside of platinum with mono and polycrystalline structure are received. The crystalline condition of the siliside was determined by electron-graphical method. The influence of background temperature to parameters of preparing elements have been investigated in the temperature range of (100 - 300)D'Alembertian. It was obtained that ideality factor (n) and open circuit voltage (U D'Alembertian D'Alembertian) are increased, but short circuit current (Isc) is not changed with decreasing of temperature. It was established that the temperature dependence of solar elements parameters are strongly display in polycrystalline siliside.

Paper Details

Date Published: 29 November 2000
PDF: 3 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408439
Show Author Affiliations
Sh. S. Aslanov, Institute of Photoelectronics (Azerbaijan)
H. R. Nuriyev, Institute of Photoelectronics (Azerbaijan)
F. B. Dadasheva, Institute of Photoelectronics (Azerbaijan)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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