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Proceedings Paper

Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering
Author(s): Xiaofeng Peng; Yuzhi Zhang; Lixin Song; Xingfang Hu
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Paper Abstract

Carbon-rich SiC thin films were synthesized by rf-reactive sputtering at different anodic voltages, 1.2 kV, 1.6 kV and 2.0 kV respectively. XPS, FTIR, Raman spectra and Nano Indentor microhardness were used to characterize as- deposited thin films. The results showed that higher anodic voltage enabled to increase Si-C bond and sp3-bonded carbon atoms in the films. The sample grown at 2.0 kV exhibited Si/C ratio of nearly 1 from XPS results, a pronounced Si-C peak in the FTIR spectra, only a weak peak at 1420 cm-1 and no other graphite peak in the Raman spectra, the microhardness of 25.2 GPa.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408436
Show Author Affiliations
Xiaofeng Peng, Shanghai Institute of Ceramics (China)
Yuzhi Zhang, Shanghai Institute of Ceramics (China)
Lixin Song, Shanghai Institute of Ceramics (China)
Xingfang Hu, Shanghai Institute of Ceramics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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