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Proceedings Paper

Influence of annealing conditions on the chemical states of InP/SiO2nanocomposite films deposited by rf magnetron co-sputtering
Author(s): Ruiqin Ding; Guorong Zhou; Hao Wang; Huidong Yang; Lin Hu
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Paper Abstract

Indium phosphide/silica composite thin films have been fabricated on water-cooled substrates and heated substrates respectively by radio frequency magnetron cosputtering technique. X ray diffraction patterns and optical absorption and photoluminescence spectra at room temperature strongly suggest that InP nanocrystals exist in the SiO2 matrices of the films deposited on water-cooled substrates after annealing and of the films deposited on heated substrates. X-ray photoelectron spectra show that there are quite a log of oxides of In and P and quite many oxygen deficiencies of SiO2 in the films deposited on water-cooled substrates, but there are few deficiencies of SiO2 and much less oxides of In and P in the films deposited on heated substrates. The component of InP increases and the oxides of In and P and oxygen deficiencies in SiO2 diminish at a large extent under suitable annealing temperature and time in a high vacuum system, but the role of annealing is limited because of the escape of P. The problem can be solved quite well by coating a SiO2 layer on the surfaces of the films before annealing and then annealing the films in H2 of 103 Pa.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408434
Show Author Affiliations
Ruiqin Ding, Wuyi Univ. (China)
Guorong Zhou, Wuyi Univ. (China)
Hao Wang, Wuyi Univ. (China)
Huidong Yang, Wuyi Univ. (China)
Lin Hu, Wuyi Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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