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Proceedings Paper

Characteristics of reactive ion etching of indium nitride
Author(s): Qixin Guo; Motoatsu Matsuse; Mitsuhiro Nishio; Hiroshi Ogawa
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Paper Abstract

We have studied the characteristics of reactive ion etching of indium nitride, using CH4 and H2 gases. The effects of CH4/H2 gas composition and total gas pressure on the etching rates were investigated. It was found that variation of CH4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. Smooth etched InN surface with the rate of around 610 approximately 710 angstroms/min was obtained in the range of 5 approximately 15% CH4 concentration and 25 approximately 55 Pa pressure.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408432
Show Author Affiliations
Qixin Guo, Saga Univ. (Japan)
Motoatsu Matsuse, Saga Univ. (Japan)
Mitsuhiro Nishio, Saga Univ. (Japan)
Hiroshi Ogawa, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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