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Proceedings Paper

Numerical simulation of continuous Nd:YAG laser annealing of InP
Author(s): Renwu Fu; Zhihua Cai; Chao Chen; Marija I. Markevich; A. M. Chaplanov
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Paper Abstract

The semiconductor solid phase epitaxial model of continuous laser-annealing is used to simulate the laser-annealing process of different doping concentration of InP at the continuous Nd:YAG laser. Specially, quasi-static model is used to simulate the radial heat dissipation from radiant region to radiationless region. At the same time, thermal conductivity and optical absorption coefficient varied with temperature is also considered. The method of hidden-form different is used in solving 1D, non-homogeneous, nonlinear partial differential equation of heat conduction. At the room temperature T0 equals 300 K and the power intensity of laser I0 equals 800 W/cm2, the result is that the temperature of surface reaches about 1290 K after 3.8 sec.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408430
Show Author Affiliations
Renwu Fu, Xiamen Univ. (China)
Zhihua Cai, Xiamen Univ. (China)
Chao Chen, Xiamen Univ. (China)
Marija I. Markevich, Institute of Electronics (Belarus)
A. M. Chaplanov, Institute of Electronics (Belarus)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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