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Proceedings Paper

Enhance action by introducing cesium on surface inversion layer of P-silicon
Author(s): Tietun Sun; Fanying Meng; Pingfang Cheng
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Paper Abstract

This paper presents the carrier distribution of MIS/IL solar cell in the strong inversion condition. The variation of the surface potential Vs with the fixed positive charge density Qs/q, energy structure and the sheet resistance have been calculated using Fermi statistics distribution. Based that, the MIS/IL solar cells are fabricated with the solar grade silicon material. Consequently, the difference of the solar cell performance before and after doping cesium is compared.

Paper Details

Date Published: 29 November 2000
PDF: 5 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408427
Show Author Affiliations
Tietun Sun, Shanghai Jiao Tong Univ. and Zhejian Univ. (China)
Fanying Meng, Shanghai Jiao Tong Univ. and Zhejiang Univ. (China)
Pingfang Cheng, Shanghai Jiao Tong Univ. and Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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