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Proceedings Paper

Infrared photoluminescence characterization of HgCdTe film
Author(s): Yong Chang; Junhao Chu; Rongbin Ji; X. G. Wang; Gensheng Huang; J. F. Li; Li He; Dingyuan Tang
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Paper Abstract

The Fourier transform and double modulation Fourier transform photoluminescence measurements were performed on HgCdTe films from liquid helium temperature to room temperature in the infrared band to 10 micrometers where the influence from room temperature background blackbody emission is very strong. From the band to band transition photoluminescence peak, which dominated in HgCdTe films with the small cadmium composition, the cadmium composition, crystal-quality-related band tail energy, and the active energy of the non-radiative Shockly-Read center, are obtained. The photoluminescence characterization method is also used to investigate the intentionally doped impurity behavior in HgCdTe. The amphoteric impurity behavior of As implanted in HgCdTe is discovered with the donor and acceptor energy level of 8.5 meV and 31.5 meV, respectively. The Ag impurity level of 70 meV in MBE HgCdTe is also found.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408425
Show Author Affiliations
Yong Chang, Shanghai Institute of Technical Physics (United States)
Junhao Chu, Shanghai Institute of Technical Physics (China)
Rongbin Ji, Shanghai Institute of Technical Physics (China)
X. G. Wang, Shanghai Institute of Technical Physics (China)
Gensheng Huang, Shanghai Institute of Technical Physics (China)
J. F. Li, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)
Dingyuan Tang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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