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Proceedings Paper

Mechanism of formation and photoluminescence of Si quantum dots embedded in amorphous SiO2 matrix
Author(s): Yu Liang; Yan Jia; Yichun Liu; Yuxue Liu; De Zen Shen; Yuling Sun; Zhongmin Su
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Paper Abstract

Films of a-SiOx with different oxygen content were deposited by electron cyclotron resonance microwave plasma technique at room temperature, where the films were annealed in an Ar ambient for 30 minutes at temperatures range from 250 to 1050 degree(s)C. The system of nc-Si quantum dots dispersed in SiO2 matrix was obtained for the films annealed at 1050 degree(s)C. The structural change induced from annealing was characterized by infrared and Raman spectra, which was correlated with the identification of luminescence centers. A broad photoluminescence band centered at 750 and 770 nm is attributed to the quantum confinement effect of the Si clusters. Another PL band between 560 - 620 nm is attributed to the defects in the interfacial regions: self- trapped excitons.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408423
Show Author Affiliations
Yu Liang, Northeast Normal Univ. (China)
Yan Jia, Northeast Normal Univ. (China)
Yichun Liu, Changchun Institute of Optics and Fine Mechanics (China)
Yuxue Liu, Changchun Institute of Optics and Fine Mechanics (China)
De Zen Shen, Changchun Institute of Optics and Fine Mechanics (China)
Yuling Sun, Northeast Normal Univ. (China)
Zhongmin Su, Northeast Normal Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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