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Proceedings Paper

Poisson's ratio of AIAs
Author(s): D. Zhou; Brian F. Usher; T. Warminski; R. Absin; M. Madebo
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Paper Abstract

In this work, we present a new approach to determining Poisson's ratio of AlAs. This approach requires the growth of a particular structure with a multiple quantum well (MQW) - 10X[500 angstroms GaAs/800 angstroms AlxGa1-xAs] followed by two single layers - 0.5 (mu) AlAs and 0.5 (mu) AlxGa1-xAs on a GaAs substrate. The x-ray rocking curves of the as-grown sample give the perpendicular lattice constants in the two single epilayers, and following chemical etching to remove the two single layers, x-ray diffraction measurement of the MQW is used to determine the Al fraction x. With this data, we obtain a value for Poisson's ratio of AlAs which is VAlAs equals 0.255 +/- 0.003 assuming Vegard's law and a linear variation of the AlxGa1-xAs lattice constant with x. However we obtain VAlAs equals 0.328 +/- 0.003 if, as proposed by Z. R. Wasilewski, a nonlinear relationship with the bowing parameter c equals 1.245 X 10-3 is assumed. The value of 0.328 is in good agreement with most recent results obtained which do not assume Vegard's law. Our results therefore support the violation of Vegard's law in describing the relationship between the lattice constant of AlGaAs and its composition.

Paper Details

Date Published: 29 November 2000
PDF: 6 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408422
Show Author Affiliations
D. Zhou, La Trobe Univ. (Australia)
Brian F. Usher, La Trobe Univ. (Australia)
T. Warminski, La Trobe Univ. (Australia)
R. Absin, La Trobe Univ. (Australia)
M. Madebo, La Trobe Univ. (Australia)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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