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Proceedings Paper

High-power single quantum well array semiconductor lasers
Author(s): Yi Qu; Baoxue Bo; Xin Gao; Baoshun Zhan; Xingde Zhang; Jiawei Shi
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Paper Abstract

In this paper, through the analysis and in consideration of the facts which influence on the ultimate output power of semiconductor laser, we have designed a laser structure with gradient refraction index separate confinement single quantum well (GRIN-SCH-SQW) and have grown the laser structure by MBE. Moreover we have also fabricated array lasers by broad area structure. The lasers are cleaved into cm bars and coated with high- and low-reflectivity films (approx. 95% and 5%). The QCW output power of the array laser has reached 60 W (100 microsecond(s) , 500 Hz), the peak wavelength of the device is 806 approximately 810 nm.

Paper Details

Date Published: 29 November 2000
PDF: 3 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408412
Show Author Affiliations
Yi Qu, Jilin Univ. and Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhan, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Jiawei Shi, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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