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Proceedings Paper

Novel Si homojunction far-infrared detectors
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Paper Abstract

A novel concept to develop far-infrared (FIR) Si detectors is proposed based on homojunction internal photoemission. As the first approach, a 48 micrometers (lambda) c Si FIR detector is demonstrated on molecular beam epitaxy grown homojunction multilayers consisting of highly doped emitter layers and undoped intrinsic layers. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 +/- 0.1 A/W at 27.5 micrometers and detectivity D* of 6.6 X 1010 cmHz1/2/W at 4.2 K. The (lambda) c and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40 approximately 200 micrometers ) with high performance and tailorable (lambda) c can be realized using higher emitter layer doping concentrations.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408411
Show Author Affiliations
W. Z. Shen, Shanghai Jiao Tong Univ., Shanghai Institute of Technical Physics, and Georgia State Univ. (China)
A. G. Unil Perera, Georgia State Univ. (United States)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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