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Proceedings Paper

Core structures of the edge dislocations in GaN epilayers
Author(s): Junyong Kang
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Paper Abstract

Threading dislocations with edge components were investigated by a high-resolution transmission electron microscopy in undoped GaN epilayers grown on Al2O3 substrates. Two types of core images were observed. One is a fully filled core with regular contraction and expansion of diffraction bright dots and the other is incompletely filled with one bright dot less and irregular contraction and expansion of bright dots. The impurities around the cores were detected to contain oxygen and carbon elements by energy-dispersive x-ray spectrometer. This suggests that both types of dislocations be decorated with impurities.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408410
Show Author Affiliations
Junyong Kang, Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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